CTA2N1P_1 Datasheet, PDF (2/7 Pages) Diodes Incorporated – COMPLEX TRANSISTOR ARRAY

Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element
@ T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Symbol Min
V_(BR)CBO
60
V_(BR)CEO
40
V(BR)EBO
6.0
I_CEX
¾
I_BL
¾
h_FE
VCE(SAT)
V_BE(SAT)
20
40
80
100
40
¾
0.75
¾
C_cb
¾
C_eb
¾
h_ie
1.0
h_re
0.1
h_fe
40
h_oe
1.0
f_T
250
t_d
¾
t_r
¾
ts
¾
t_f
¾
Max
¾
¾
¾
100
100
¾
¾
¾
300
¾
0.40
0.75
0.95
1.2
6.5
30
15
8.0
500
30
¾
15
20
225
30
Unit
Test Condition
V
I_C = 100mA, I_E = 0
V
IC = 1.0mA, IB = 0
V
I_E = 100mA, I_C = 0
nA
VCE = 35V, VEB(OFF) = 0.4V
nA
VCE = 35V, VEB(OFF) = 0.4V
I_C = 100µA, V_CE = 1.0V
I_C = 1.0mA, V_CE = 1.0V
¾
I_C = 10mA, V_CE = 1.0V
I_C = 150mA, V_CE = 1.0V
I_C = 500mA, V_CE = 2.0V
V
IC = 150mA, IB = 15mA
I_C = 500mA, I_B = 50mA
V
IC = 150mA, IB = 15mA
I_C = 500mA, I_B = 50mA
pF
pF
kW
x 10^-4
¾
mS
MHz
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
V_CE = 10V, I_C = 1.0mA,
f = 1.0kHz
VCE = 10V, IC = 20mA,
f = 100MHz
ns
VCC = 30V, IC = 150mA,
ns
V_BE(off) = 2.0V, I_B1 = 15mA
ns
VCC = 30V, IC = 150mA,
ns
I_B1 = I_B2 = 15mA
Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element
@ T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BV_DSS -50
¾
I_DSS
¾
¾
I_GSS
¾
¾
¾
V VGS = 0V, ID = -250µA
¾
-15 ^{µA VDS = -50V, VGS = 0V, TJ = 25°C}
¾
-60 µA V_DS = -50V, V_GS = 0V, T_J = 125°C
¾
-100 nA _{VDS = -25V, VGS = 0V, TJ = 25°C}
¾
±10 nA VGS = ±20V, VDS = 0V
V_GS(th) -0.8
¾
-2.0 V VDS = VGS, ID = -1mA
R_{DS (ON)} ¾
¾
10
W VGS = -5V, ID = 0.100A
g_FS
.05
¾
¾
S VDS = -25V, ID = 0.1A
C_iss
¾
¾
45 pF
C_oss
¾
¾
25
pF
VDS = -25V, VGS = 0V
f = 1.0MHz
C_rss
¾
¾
12 pF
t_D(ON)
¾
10
¾
ns _{VDD = -30V, ID = -0.27A,}
t_D(OFF)
¾
18
¾
ns ^{RGEN = 50W, VGS = -10V}
Notes: 3. Short duration pulse test used to minimize self-heating effect.
DS30295 Rev. 6 - 2
2 of 7
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