CTA2N1P_1 Datasheet, PDF (1/7 Pages) Diodes Incorporated – COMPLEX TRANSISTOR ARRAY

SPICE MODEL: CTA2N1P
CTA2N1P
Lead-free
COMPLEX TRANSISTOR ARRAY
Features
· Combines MMBT4401 type transistor with BSS84 type MOSFET
· Small Surface Mount Package
· PNP/N-Channel Complement Available: CTA2P1N
· Lead Free/RoHS Compliant (Note 2)
A
Mechanical Data
· Case: SOT-363
A03
BC
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
H
· Terminals: Solderable per MIL-STD-202, Method 208
K
· Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
· Terminal Connections: See Diagram
J
DF
L
· Marking: A03, See Page 3
· Ordering Information: See Page 3
· Weight: 0.006 grams (approx.)
C_Q1
G_Q2
S_Q2
Q1
Q2
E_Q1
B_Q1
D_Q2
SOT-363
Dim Min Max
A
0.10 0.30
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
F
0.30 0.40
H
1.80 2.20
M
J
¾
0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.25
a
0°
8°
All Dimensions in mm
Maximum Ratings, Total Device ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
P_d
R_qJA
Tj, TSTG
Value
150
833
-55 to +150
Unit
mW
°C/W
°C
Maximum Ratings, Q1, MMBT4401 NPN Transistor Element ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
60
40
6.0
600
Unit
V
V
V
mA
Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage
Drain Current
Continuous
Continuous
Symbol
V_DSS
VDGR
V_GSS
I_D
Value
-50
-50
±20
-130
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
Units
V
V
V
mA
DS30295 Rev. 6 - 2
1 of 7
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CTA2N1P
ã Diodes Incorporated