BC857BV Datasheet, PDF (2/3 Pages) NXP Semiconductors – PNP general purpose double transistor

Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Output Capacitance
Noise Figure
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
hFE
Min
-50
-45
-5
220
V_CE(SAT) —
VBE(SAT)
—
—
V_BE(ON)
-600
—
ICBO
—
—
f_T
100
C_OB
—
Typ
—
—
—
290
—
—
-700
-900
—
—
—
—
—
—
NF
—
—
Max
—
—
—
475
-100
-400
—
—
-750
-820
-15
-4.0
—
4.5
10
Unit
V
V
V
—
mV
mV
mV
nA
µA
MHz
pF
dB
Test Condition
I_C = 10mA, I_B = 0
I_C = 10mA, I_B = 0
I_E = 1mA, I_C = 0
V_CE = -5.0V, I_C = -2.0mA
IC = -10mA, IB = -0.5mA
I_C = -100mA, I_B = -5.0mA
I_C = -10mA, I_B = -0.5mA
IC = -100mA, IB = -5.0mA
VCE = -5.0V, IC = -2.0mA
V_CE = -5.0V, I_C = -10mA
V_CB = -30V
VCB = -30V, TA = 150°C
V_CE = -5.0V, I_C = -10mA,
f = 100MHz
VCB = -10V, f = 1.0MHz
IC = -0.2mA, VCE = -5.0Vdc,
R_S = 2.0KW, f = 1.0KHz,
BW = 200Hz
Ordering Information ^{(Note 5)}
Device
BC857BV-7
Packaging
SOT-563
Notes:
4. Short duration pulse test used to minimize self-heating effect.
5. For Packaging Details: go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Shipping
3000/Tape & Reel
Marking Information
K5V YM
K5V = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2003
P
2004
R
2005
S
2006
T
Month
Code
Jan
Feb
Mar
Apr
1
2
3
4
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
May Jun Jul Aug Sep
Oct
Nov Dec
5
6
7
8
9
O
N
D
DS30433 Rev. 3 - 2
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BC857BV