2SA733P Datasheet, PDF (2/4 Pages) Diodes Incorporated – PNP General Purpose Amplifier

Electrical Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V_CBO Collector-Base Breakdown Voltage I_C = -10μA, I_E = 0
V_CEO Collector-Emitter Breakdown Voltage I_C = -1mA, I_B = 0
V_EBO Emitter-Base Breakdown Voltage I_E = -10μA, I_C = 0
I_CBO Collector Cut-off Current
V_CB = -60V, I_E = 0
I_EBO Emitter Cut-off Current
V_EB = -5V, I_C = 0
On Characteristics
h_FE DC Current Gain
V_CE(sat) Collector-Emitter Saturation Voltage
V_BE(on) Base-Emitter On Voltage
Small Signal Characteristics
V_CE = -6V, I_C = -1mA
I_C = -100mA, I_B = -10mA
V_CE = -6V, I_C = -1mA
f_T
Current Gain Bandwidth Product
C_ob Output Capacitance
V_CE = -6V, I_C = -10mA
V_CB = -10V, I_E = 0
f = 1.0MHz
NF Noise Figure
V_CE = -6V, I_C = -0.3mA
R_G = 10kΩ, f = 100Hz
* Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%
Min.
-60
-50
-5.0
90
-15
-580
50
Typ.
Max. Units
V
V
V
-100
nA
-100
nA
600
-300
mV
-680
mV
MHz
6
pF
20
dB
h_FE Classification
Classification
h_FE
R
90 ~ 180
Q
135 ~ 270
P
200 ~ 400
K
300 ~ 600
© 2009 Fairchild Semiconductor Corporation
2SA733 Rev. A0
2
www.fairchildsemi.com