2SA733P Datasheet, PDF (1/4 Pages) Diodes Incorporated – PNP General Purpose Amplifier

2SA733
PNP General Purpose Amplifier
Features
• This device is designed for general purpose amplifier applications
at collector currents to 300 mA.
• Sourced from Process 68.
September 2009
1
TO-92
1. Emitter 2. Collector 3.Base
Absolute Maximum Ratings* T_A=25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
-60
V
V_CEO
Collector-Emitter Voltage
-50
V
V_EBO
Emitter-Base Voltage
-5.0
V
I_C
Collector current
- Continuous
-500
mA
T_J, T_STG Operating and Storage Junction Temperature Range
-55 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics T_A=25°C unless otherwise noted
Symbol
Parameter
P_D
Total Device Dissipation
Derate above 25°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
© 2009 Fairchild Semiconductor Corporation
2SA733 Rev. A0
1
www.fairchildsemi.com