DTP4N60_13 Datasheet, PDF (1/11 Pages) DinTek Semiconductor Co,.Ltd – Power MOSFET Reduced Gate Drive Requirement

DTP4N60/DTP4N60F/DTU4N60/DTL4N60
Power MOSFET
www.din-tek.jp
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
600
V_GS = 10 V
2.2
39
10
19
Single
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V, V_GS Rating
• Reduced C_iss, C_oss, C_rss
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
TO-220AB
TO-220 FULLPAK
TO-251
TO-252
D
G
GD S
Top View
GDS
Top View
GDS
Top View
GDS
Top View
DTP4N60DTP4N60FDTU4N60DTL4N60
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 50 V, starting T_J = 25 °C, L = 25 mH, R_g = 25 , I_AS = 6.2 A (see fig. 12).
c. I_SD  6.2 A, dI/dt  80 A/μs, V_DD  V_DS, T_J  150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
600
± 30
4
2.9
25
1.0
530
6.2
13
125
3.0
- 55 to + 150
300^d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
1