2N4441 Datasheet, PDF (2/4 Pages) Motorola, Inc – SILICON CONTROLLED RECTIFIERS

DIGITRON SEMICONDUCTORS
2N4441-2N4444
SILICON CONTROLLED RECTIFIER
Characteristic
Gate trigger voltage (continuous dc)
(V_D = 7 Vdc, R_L = 100 Ω)
(V_D = 7 Vdc, R_L = 100 Ω)
(V_D = Rated V_DRM, R_L = 100 Ω)
T_C = 25°C
T_C = -40°C
T_C = 100°C
Peak on state voltage
(pulse width = 1 to 2ms, duty cycle ≤ 2%)
(I_TM = 5A peak)
(I_TM = 15.7A peak)
Holding current
(V_D = 7Vdc, gate open)
T_C = 25°C
T_C = -40°C
Gate controlled turn-on time
(I_TM = 5A, I_GT = 20mA, V_D = rated V_DRM)
Circuit commutated turn-off time
(I_TM = 5A, I_R = 5A)
(I_TM = 5A, I_R = 5A, T_J = 100°C)
Critical rate of rise of off-state voltage
(V_D = rated V_DRM, exponential waveform, T_J = 100°C, gate open)
MECHANICAL CHARACTERISTICS
Case
TO-127
Marking
Body painted, alpha-numeric
Pin out
See below
Symbol
V_GT
Min.
-
-
0.2
Typ.
0.75
-
-
Max.
1.5
2.5
-
V_TM
-
1
1.5
-
-
2
I_H
t_gt
t_q
dv/dt
-
6
40
-
-
70
-
1
-
-
15
-
-
20
-
-
50
-
Unit
Volts
Volts
mA
µs
µs
V/µs
TO-127
Inches
Millimeters
Min Max Min Max
A 0.635 0.645 16.130 16.380
B 0.495 0.505 12.570 12.830
C 0.125 0.135 3.180 3.430
D 0.043 0.049 1.090 1.240
F 0.138 0.148 3.510 3.760
G
0.166 BSC
4.220 BSC
H 0.105 0.115 2.670 2.920
J 0.032 0.034 0.813 0.864
K 0.595 0.645 15.110 16.380
M
9° TYP
9° TYP
Q 0.185 0.195 4.700 4.950
R 0.075 0.085 1.910 2.160
U 0.245 0.255 6.220 6.480
V 0.080
-
2.030
-
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
[e-mail]
www.digitroncorp.com
Rev. 20130117