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| 2N4441 Datasheet, PDF (1/4 Pages) Motorola, Inc – SILICON CONTROLLED RECTIFIERS | |||
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DIGITRON SEMICONDUCTORS
2N4441-2N4444
SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as âHRâ (high reliability) screened per MIL-PRF-19500, JANTX level. Add âHRâ suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage(1)
2N4441
2N4442
2N4443
2N4444
VRRM, VDRM
50
200
400
600
Volts
Non repetitive peak reverse blocking voltage
(t = 5ms (max.) duration)
2N4441
2N4442
2N4443
2N4444
VRSM
75
Volts
300
500
700
Forward current RMS (all conduction angles)
Average on state current, TC = 73°C
Peak non-repetitive surge current
(1/2 cycle, 60Hz preceded and followed by rated current and voltage)
IT(RMS)
IT(AV)
ITSM
8
Amps
5.1
Amps
Amps
80
Circuit fusing considerations, TJ = -40 to +100°C; t = 8.3ms
Forward peak gate power
Average gate power
Forward peak gate current
I2t
PGM
PG(AV)
IGM
25
A2s
5
Watts
0.5
Watts
2
Amps
Peak reverse gate voltage
VRGM
10
Volts
Operating junction temperature range
TJ
-40 to +100
°C
Storage temperature range
Tstg
-40 to +150
°C
Mounting torque (6-32 screw)(2)
-
8
In. lb.
Note 1: Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Note 2: Torque rating applies with use of torque washer. Mounting torque in excess of 8 in. lbs. does not appreciably lower case-to-sink thermal resistance. Anode lead and
heatsink contact pad are common. Soldering temperatures shall not exceed 225°C.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typical Maximum
Unit
Thermal resistance, junction to case
Thermal resistance, junction to ambient
RÓ¨JC
-
2.5
°C/W
RÓ¨JA
40
-
°C/W
ELECTRICAL CHARACTERISTICS (TC 25°C unless otherwise noted)
Characteristic
Symbol
Peak forward blocking current
(Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 100°C
IDRM or IRRM
Gate trigger current (continuous dc)
(VD = 7 Vdc, RL = 100 â¦)
TC = 25°C
IGT
TC = -40°C
Min.
-
-
-
-
Typ.
-
-
7
-
Max.
10
2
30
60
Unit
µA
mA
mA
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130117
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