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| 8550 Datasheet, PDF (2/5 Pages) Micro Electronics – GENERAL DESCRIPTION | |||
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8550
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
DC Current Gain
at -VCE=1V, -IC=100mA
at -VCE=1V, -IC=350mA
Collector Cutoff Current
ST 8550B
hFE
70
-
120
ST 8550C
hFE
120
-
200
ST 8550D
hFE
160
-
300
ST 8550E
hFE
300
-
380
hFE
60
-
-
at -VCB=35V
Collector Saturation Voltage
ICBO
-
-
100
at -IC=500mA, -IB=50mA
Base Saturation Voltage
VCE(sat)
-
-
0.5
at -IC=500mA, -IB=50mA
Collector Emitter Breakdown Voltage
VBE(sat)
-
-
1.2
at -IC=2mA
Collector Base Breakdown Voltage
V(BR)CEO
25
-
-
at -IC=10μA
Emitter Base Breakdown Voltage
V(BR)CBO
40
-
-
at -IE=100μA
Gain Bandwidth Product
V(BR)EBO
6
-
-
at -VCE=5V, -IC=10mA, f=50MHz
Collector Base Capacitance
fT
-
100
-
at -VCB=10V, f=1MHz
CCBO
-
12
-
Thermal Resistance Junction to Ambient
RthA
-
-
2001)
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
Unit
-
-
-
-
-
nA
V
V
V
V
V
MHz
pF
K/W
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