8550 Datasheet, PDF (1/5 Pages) Micro Electronics – GENERAL DESCRIPTION

8550
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
The transistor is subdivided into four groups, B, C, D
and E, according to its DC current gain. As
complementary type the NPN transistor ST 8050 is
recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T_a = 25℃)
Symbol
Value
Unit
Collector Emitter Voltage
-V_CEO
25
V
Collector Base Voltage
-V_CBO
40
V
Emitter Base Voltage
-V_EBO
6
V
Collector Current
-I_C
800
mA
Peak Collector Current
-I_CM
1
A
Base Current
-I_B
100
mA
Power Dissipation
P_tot
625¹⁾
mW
Junction Temperature
T_j
150
O_C
Storage Temperature Range
T_S
-55 to +150
O_C
1) _{Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case}