2N5551 Datasheet, PDF (2/2 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

Typical Characteristics
2N5551
Static Characteristic
18
90uA
COMMON
EMITTER
15
80uA _{T =25℃}
a
70uA
12
60uA
50uA
9
40uA
6
30uA
I =20uA
3
B
0
0
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE V (V)
CE
1.0
β=10
V —— I
BEsat
C
0.8
T =25℃
a
0.6
T =100℃
a
0.4
500
COMMON EMITTER
V =5V
CE
h ——
FE
I
C
T =100℃
a
T =25℃
a
100
10
1
0.3
β=10
0.1
10
100
200
COLLECTOR CURRENT I (mA)
C
T =25℃
a
0.2
0.1
1
10
COLLECTOR CURRENT I (mA)
C
V —— I
BE
C
200
COMMON EMITTER
V =5V
100
CE
T =100℃
a
T =25℃
a
10
100 200
0.01
1
100
10
10
100
200
COLLECTOR CURRENT I (mA)
C
C / C ——
ob
ib
V /V
CB
EB
C
ib
f=1MHz
I =0 / I =0
E
C
T =25℃
a
C
ob
1
0.2
0.4
0.6
0.8
1.0
BASE-EMITTER VOLTAGE V (V)
BE
150
V =10V
CE
T =25℃
a
f —— I
T
C
100
50
1
3
10
20
30
COLLECTOR CURRENT I (mA)
C
1
0.1
750
625
500
375
250
125
0
0
1
10
20
REVERSE VOLTAGE V (V)
P —— T
C
a
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃)
a
A,Jun,2011