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| 2N5551 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier | |||
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DONGGUAN NANJING ELECTRONICS LTD.,
TO-92 Plastic-Encapsulate Transistors
2N5551 TRANSISTOR (NPN)
TO â 92
FEATURES
z General Purpose Switching Application
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
1. EMITTER
2. BASE
3. COLLECTOR
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
180
160
6
0.6
625
200
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO*
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
hFE(1)
DC current gain
hFE(2)
hFE(3)
Collector-emitter saturation voltage
VCE(sat)ï¼1ï¼
VCE(sat)ï¼2ï¼
Base-emitter saturation voltage
VBE (sat)ï¼1ï¼
VBE (sat)ï¼2ï¼
Collector output capacitance
Cob
Emitter input capacitance
Cib
Transition frequency
fT
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
IC=100µA,IE=0
IC=1mA,IB=0
IE=10µA,IC=0
VCB=120V,IE=0
VEB=4V,IC=0
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
IC=10mA,IB=1mA
IC=50mA,IB=5mA
VCB=10V,IE=0, f=1MHz
VBE=0.5V,IC=0, f=1MHz
VCE=10V,IC=10mA, f=100MHz
CLASSIFICATION OF hFE(2)
RANK
A
B
RANGE
80-100
100-150
150-200
Min Typ Max Unit
180
V
160
V
6
V
50
nA
50
nA
80
80
300
50
0.15
V
0.2
V
1
V
1
V
6
pF
20
pF
100
300 MHz
C
200-300
A,Jun,2011
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