2N5550 Datasheet, PDF (2/3 Pages) ON Semiconductor – mplifier Transistors(NPN Silicon)

2N5550 / 2N5551
Characteristics at T_amb = 25 ^OC
Parameter
Symbol Min. Max.
DC Current Gain
at V_CE = 5 V, I_C = 1 mA
at V_CE = 5 V, I_C = 10 mA
at V_CE = 5 V, I_C = 50 mA
Collector Emitter Breakdown Voltage
at I_C = 1 mA
Collector Base Breakdown Voltage
at I_C = 100 µA
Emitter Base Breakdown Voltage
at I_E = 10 µA
Collector Cutoff Current
ST 2N5550 h_FE
ST 2N5551 h_FE
ST 2N5550 h_FE
ST 2N5551 h_FE
ST 2N5550 h_FE
ST 2N5551 h_FE
60
-
80
-
60
250
80
250
20
-
30
-
ST 2N5550 ^V(BR)CEO ¹⁴⁰
-
ST 2N5551 ^V(BR)CEO ¹⁶⁰
-
ST 2N5550 ^V(BR)CBO ¹⁶⁰
-
ST 2N5551 ^{V(BR)CBO 180}
-
V_(BR)EBO
6
-
at V_CB = 100 V
at V_CB = 120 V
Emitter Cutoff Current
at V_EB = 4 V
Collector Saturation Voltage
ST 2N5550 I_CBO
ST 2N5551 I_CBO
I_EBO
-
100
-
50
-
50
at I_C = 10 mA, I_B = 1 mA
at I_C = 50 mA, I_B = 5 mA
V_{CE sat}
-
0.15
ST 2N5550 VCE sat
-
0.25
ST 2N5551 VCE sat
-
0.2
Base Saturation Voltage
at I_C = 10 mA, I_B = 1 mA
at I_C = 50 mA, I_B = 5 mA
V_{BE sat}
-
1
ST 2N5550 VBE sat
-
1.2
ST 2N5551 VBE sat
-
1
Gain Bandwidth Product
at V_CE = 10 V, I_C = 10 mA, f = 100 MHz
Collector Base Capacitance
at V_CB = 10 V, f = 1 MHz
f_T
100 300
C_CBO
-
6
Noise Figure
at V_CE = 5 V, I_C = 200 µA, R_G = 2 KΩ, f = 30 Hz…15 KHz ST 2N5550 ^NF
-
10
Thermal Resistance Junction to Ambient
ST 2N5551 ^NF
R_thA
-
8
-
200 ¹⁾
1) _{Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.}
Unit
-
-
-
-
-
-
V
V
V
V
V
nA
nA
nA
V
V
V
V
V
V
MHz
pF
dB
dB
K/W