2N5550 Datasheet, PDF (1/3 Pages) ON Semiconductor – mplifier Transistors(NPN Silicon)

2N5550 / 2N5551
NPN Silicon Epitaxial Planar Transistors
for general purpose, high voltage amplifier
applications.
As complementary types the PNP transistors
ST 2N5400 and ST 2N5401 are recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Symbol
Value
Unit
Collector Emitter Voltage
ST 2N5550
V_CEO
140
V
ST 2N5551
V_CEO
160
V
Collector Base Voltage
ST 2N5550
V_CBO
160
V
ST 2N5551
V_CBO
180
V
Emitter Base Voltage
V_EBO
6
V
Collector Current
I_C
600
mA
Power Dissipation
P_tot
625 ¹⁾
mW
Junction Temperature
T_j
150
o_C
Storage Temperature Range
T_S
- 55 to + 150
o_C
1) _{Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.}