IRF840 Datasheet, PDF (2/2 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

IRF840
N-Channel Power MOSFET
Electrical Characteristics (TJ = 25^oC unless otherwise specified)
Characteristic
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Forward Leakage Current
Gate-Source Reverse Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
Min
500
-
-
-
-
2.0
-
4.0
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
0.6
-
1450
190
45.4
15
33
40
32
40
8.0
17
4.5
Max
-
0.25
1.0
100
-100
4.0
0.8
-
1680
246
144
50
72
150
60
64
-
-
-
Unit
Test Conditions
V VGS=0V, ID=250µA
mA ^{VDS=500V, VGS=0V}
VDS=400V, VGS=0V, TJ=125^oC
VGSF=20V, VDS=0V
nA
VGSR=-20V, VDS=0V
V VDS=VGS, ID=250µA
Ω VGS=10V, ID=4.0A(Note)
S VDS= 15V, ID=4.0A(Note)
pF VDS=25V, VGS=0V, f=1.0MHz
ns
VDD=250V, ID=8.0A,
VGS=10V, RG=9.1Ω(Note)
nC VDS=400V, ID=8.0A, VGS=10V(Note)
nH
Measured from the drain lead 0.25"
from package to center of die
Internal Source Inductance
LS
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Forward Turn-On Time
ton
Thermal Resistance
Junction to Case
Junction to Ambient
RθJC
RθJA
Note: Pulse Test: Pulse Width 300µs, Duty Cycle 2%
-
7.5
-
nH
Measured from the source lead 0.25"
from package to source bond pad
-
1.2
2.0
V IS=8.0A, VGS=0V(Note)
-
320
-
ns IF=8.0A, di/dt=100A/µs(Note)
Intrinsic turn-on time is neglegible and dominated by inductance LS+LD
-
-
1.0 _{oC/W -}
-
-
62.5
DC COMPONENTS CO., LTD.
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