IRF840 Datasheet, PDF (1/2 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
IRF840
TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET
VDSS = 500 Volts
RDS(on) = 0.8 Ohm
ID = 8.0 Amperes
Features
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
TO-220AB
Description
Designed to withstand high energy in the avalanche mode and
switch efficiently. Also offer a drain-to-source diode with fast
recovery time. Designed for high voltage, high speed applications
such as power supplies, PWM motor controls and other inductive
loads, the avalanche energy capability is specified to eliminate
the guesswork in designs where inductive loads are switched and
offer additional safety margin against unexpected voltage transients.
Pinning
1 = Gate
2 = Drain
3 = Source
Symbol
D
G
.405(10.28)
.151 _Typ .380(9.66)
(3.83)
.185(4.70)
.173(4.40)
.055(1.39)
.045(1.15)
.625(15.87)
.570(14.48)
1 23
.295(7.49)
.220(5.58)
.350(8.90)
.330(8.38)
.640 _Typ
(16.25)
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
(2.54) ^Typ
.024(0.60)
.014(0.35)
S
N-Channel MOSFET
Dimensions in inches and (millimeters)
Absolute Maximum Ratings
Characteristic
Drain Current @ TC=25^oC
Continuous
Pulsed
Gate-to-Source Voltage
Total Power Dissipation @ TC=25^oC
Derate above 25^oC
Operating Junction Temperature
Storage Temperature
Maximum Lead Temperature for Soldering Purposes,
1/8" from Case for 10 Seconds
Symbol
ID
IDM
VGS
PD
TJ
TSTG
TL
Rating
8.0
32
20
125
1.0
-55 to +150
-55 to +150
260
Unit
A
V
W
W/^oC
o_C
o_C
o_C