DS1251 Datasheet, PDF (9/22 Pages) Dallas Semiconductor – 4096k NV SRAM with Phantom Clock

DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Input Leakage Current
I_IL
I/O Leakage Current
I_IO
CE ³ V_IH ≤ V_CC
Output Current @ 2.4V
Output Current @ 0.4V
Standby Current CE = 2.2V
I_OH
I_OL
I_CCS1
Standby Current
CE = V_CC - 0.5V
Operating Current t_CYC = 70ns
I_CCS2
I_CC01
Write Protection Voltage
V_PF
Battery Switchover Voltage
V_SO
MIN
-1.0
-1.0
-1.0
2.0
4.25
DS1251/DS1251P
Over the operating range (5V)
TYP MAX UNITS NOTES
+1.0 mA
12
+1.0 mA
mA
mA
5
10 mA
3.0
5.0 mA
85 mA
4.37 4.50 V
11
V_BAT
V
11
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN
Input Leakage Current
I_IL
-1.0
I/O Leakage Current
I_IO
-1.0
CE ³ V_IH ≤ V_CC
Output Current @ 2.4V
Output Current @ 0.4V
Standby Current CE = 2.2V
I_OH
-1.0
I_OL
2.0
I_CCS1
Standby Current
I_CCS2
CE = V_CC - 0.5V
Operating Current t_CYC = 70ns
Write Protection Voltage
Battery Switchover Voltage
I_CC01
V_PF
V_SO
2.80
Over the operating range (3.3V)
TYP
MAX UNITS NOTES
+1.0 mA
12
+1.0 mA
mA
mA
5
7
mA
2.0
3.0 mA
50
mA
2.97
V
11
V_BAT or V_PF
V
11
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C_IN
C_I/O
MIN
TYP
5
5
MAX
10
10
(T_A = +25°C)
UNITS NOTES
pF
pF
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