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DS1251 Datasheet, PDF (12/22 Pages) Dallas Semiconductor – 4096k NV SRAM with Phantom Clock
DS1251/DS1251P
MEMORY AC ELECTRICAL CHARACTERISTICS
Over the operating range (3.3V)
PARAMETER
SYMBOL
DS1251W-120
MIN MAX
UNITS
NOTES
Read Cycle Time
Access Time
tRC
120
ns
tACC
120
ns
OE to Output Valid
tOE
60
ns
CE to Output Valid
tCO
120
ns
OE or CE to Output Active
tCOE
5
ns
5
Output High-Z from Deselection
Output Hold from Address Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
tOD
40
ns
5
tOH
5
ns
tWC
120
ns
tWP
90
ns
3
tAW
0
ns
tWR
20
ns
10
Output High-Z from WE
tODW
40
ns
5
Output Active from WE
tOEW
5
ns
5
Data Setup Time
tDS
50
ns
4
Data Hold Time from WE
tDH
20
ns
4
PHANTOM CLOCK AC ELECTRICAL CHARACTERISTICS
Over the operating range (3.3V)
PARAMETER
SYMBOL MIN TYP MAX UNITS NOTES
Read Cycle Time
tRC
120
ns
CE Access Time
tCO
100
ns
OE Access Time
tOE
100
ns
CE to Output Low-Z
tCOE
5
ns
OE to Output Low-Z
tOEE
5
ns
CE to Output High-Z
tOD
40
ns
5
OE to Output High-Z
tODO
40
ns
5
Read Recovery
Write Cycle Time
Write Pulse Width
Write Recovery
Data Setup Time
Data Hold Time
tRR
20
tWC
120
tWP
100
tWR
20
tDS
45
tDH
0
ns
ns
ns
3
ns
10
ns
4
ns
4
CE Pulse Width
tCW
105
ns
RESET Pulse Width
tRST
120
ns
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