DS1747 Datasheet, PDF (8/18 Pages) Dallas Semiconductor – Y2K-Compliant, Nonvolatile Timekeeping RAMs

DS1747/DS1747P Y2K-Compliant, Nonvolatile Timekeeping RAMs
DC ELECTRICAL CHARACTERISTICS
(V_CC = 3.3V ±10%, T_A = Over the Operating Range.)
PARAMETER
SYMBOL MIN
Active Supply Current
Icc
TTL Standby Current
( CE = V_IH)
CMOS Standby Current
( CE ³ V_CC - 0.2V)
Input Leakage Current
(Any Input)
Output Leakage Current
(Any Output)
Output Logic 1 Voltage
(I_OUT = -1.0 mA)
Output Logic 0 Voltage
(I_OUT = +2.1 mA)
Write Protection Voltage
Icc₁
Icc₂
I_IL
-1
I_OL
-1
V_OH
2.4
V_OL
V_PF
2.80
Battery Switchover Voltage
V_SO
TYP
V_BAT
or
V_PF
MAX
30
2
2
+1
+1
0.4
2.97
UNITS
mA
mA
mA
mA
mA
V
V
NOTES
2, 3
2, 3
2, 3
1
1
1
1, 4
AC CHARACTERISTICS—READ CYCLE (5V)
(V_CC = 5.0V ±10%, T_A = Over the Operating Range.)
PARAMETER
SYMBOL MIN TYP
Read Cycle Time
t_RC
70
Address Access Time
t_AA
CE to DQ Low-Z
t_CEL
5
CE E Access Time
t_CEA
CE Data Off Time
OE to DQ Low-Z
t_CEZ
t_OEL
5
OE Access Time
t_OEA
OE Data Off Time
t_OEZ
Output Hold from Address
t_OH
5
MAX
70
70
25
35
25
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
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