DS1217A Datasheet, PDF (8/8 Pages) Dallas Semiconductor – Nonvolatile Read/Write Cartridge

DS1217A
NOTES:
1. WE is high for a read cycle.
2. OE = V_IH or V_IL. If OE = V_IH during the write cycle, the output buffers remain in a high impedance state.
3. t_WP is specified as the logical AND of CE and WE. t_WP is measured from the latter of CE or WE going low to
the earlier of CE or WE going high.
4. t_DH, t_DS are measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5pF load and are not 100% tested.
6. If the CE low transition occurs simultaneously with or later than the WE low transition in Write Cycle 1, the
output buffers remain in a high impedance state during this period.
7. If the CE high transition occurs prior to or simultaneously with the WE high transition in Write Cycle 1, the
output buffers remain in a high impedance state during this period.
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output
buffers remains in a high impedance state during this period.
9. Each DS1217A is marked with a 4-digit date code AABB. AA designates the year of manufacture; BB desig-
nates the week of manufacture. The expected t_DR is defined as starting at the date of manufacture.
10. Removing and installing the cartridge with power applied may disturb data.
DC TEST CONDITIONS
Outputs Open
t Cycle = 250ns
All Voltages Are Referenced to Ground
AC TEST CONDITIONS
Output Load: 100pF + 1TTL Gate
Input Pulse Levels: 0 - 3.0V
Timing Measurement Reference Levels
Input: 1.5 V
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