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| DS1217A Datasheet, PDF (7/8 Pages) Dallas Semiconductor – Nonvolatile Read/Write Cartridge | |||
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POWER-DOWN/POWER-UP CONDITION
VCC
4.50V
DS1217A
3.2V
tF
tPD
CE
LEAKAGE CURRENT
IL SUPPLIED FROM
LITHIUM CELL
tR
tREC
DATA RETENTION TIME
tDR
POWER-DOWN/POWER-UP TIMING
SYM
PARAMETER
tPD
tF
tR
tREC
CE at VIH before Power-Down
VCC Slew from 4.5V to 0V (CE at VIH)
VCC Slew from 0V to 4.5V (CE at VIH)
CE at VIH after Power-Up
(0°C to 70°C)
MIN
MAX
UNITS NOTES
0
µs
10
100
µs
0
µs
2
125
ms
10
SYM
tDR
PARAMETER
Expected Data Retention Time
(tA = 25°C)
MIN
MAX
UNITS NOTES
10
years
9
WARNING:
Under no circumstances are negative undershoots, of any amplitude, allowed when the device is in battery backup
mode.
030598 7/8
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