DS1603 Datasheet, PDF (7/8 Pages) National Semiconductor (TI) – TRI-STATE Dual Receiver

AC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN
Data to CLK Setup
CLK to Data Hold
CLK to Data Delay
CLK Low Time
CLK High Time
CLK Frequency
CLK Rise & Fall
RST to CLK Setup
t_DC
50
t_CDH
60
t_CDD
t_CL
250
t_CH
250
f_CLK
DC
t_F, t_R
t_CC
100
CLK to RST Hold
RST Inactive Time
t_CCH
60
t_CWH
1
RST Low to I/O High Z
t_RDZ
CLK High to I/O High Z
t_CDZ
PARAMETER
Expected Data
Retention Time
SYMBOL MIN
t_DR
10
DS1603
(V_CC = +5V ±10%; 0°C to +70°C)
TYP
MAX
UNITS NOTES
ns
6
ns
6
200
ns
6, 7, 8
ns
6
ns
6
2.0
MHz
6
500
ns
ns
6
ns
6
µs
6
70
ns
6
20
ns
6
(t_A = 25°C)
TYP
MAX
UNITS NOTES
years
10
NOTES:
1. All voltages are reference to ground.
2. Logic 1 voltages are specified at a source current of 1 mA.
3. Logic 0 voltages are specified at a sink current of 4 mA.
4. I_CC is specified with the DQ pin open.
5. I_CC1 is specified with V_CC at 5.0V and RST = GND.
6. Measured at V_IH = 2.0V or V_IL = 0.8V.
7. Measured at V_OH = 2.4V or V_OL – 0.4V.
8. Load capacitance = 50 pF.
9. Battery trip point is the point at which the V_CC powered counter and the serial port stop operation.
10. The expected t_DR is defined as accumulative time in the absence of V_CC with the clock oscillator
running.
11. Real–Time Clock Modules can be successfully processed through conventional wave–soldering
techniques as long as temperature exposure to the lithium energy source contained within does not
exceed +85°C. Post-solder cleaning with water washing techniques is acceptable, provided that
ultrasonic vibration is not used.
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