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DS1609 Datasheet, PDF (5/7 Pages) Dallas Semiconductor – Dual Port RAM
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AC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN
Address Setup Time
Address Hold Time
Output Enable Access
OE to High Z
CE to High Z
Data Setup Time
Data Hold Time
Write Pulse Width
CE Recovery Time
WE Recovery Time
OE Recovery Time
CE to OE Setup Time
CE to WE Setup Time
tAS
5
tAH
25
tOEA
0
tOEZ
0
tCEZ
0
tDS
0
tDH
10
tWP
50
tCER
20
tWER
20
tOER
20
tCOE
25
tCWE
25
AC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN
Address Setup Time
Address Hold Time
Output Enable Access
OE to High Z
CE to High Z
Data Setup Time
Data Hold Time
Write Pulse Width
CE Recovery Time
WE Recovery Time
OE Recovery Time
CE to OE Setup Time
CE to WE Setup Time
tAS
5
tAH
25
tOEA
0
tOEZ
0
tCEZ
0
tDS
0
tDH
10
tWP
100
tCER
20
tWER
20
tOER
20
tCOE
25
tCWE
25
DS1609
(–40°C to +85°C; VCC = 5V ± 10%)
TYP
MAX
UNITS NOTES
ns
ns
50
ns
10
20
ns
20
ns
ns
ns
ns
11
ns
12
ns
12
ns
12
ns
ns
(–40°C to +85°C; VCC = 2.5V – 4.5V)
TYP
MAX
UNITS NOTES
ns
ns
100
ns
10
20
ns
20
ns
ns
ns
ns
11
ns
12
ns
12
ns
12
ns
ns
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