|
DS1350Y Datasheet, PDF (5/12 Pages) Dallas Semiconductor – 4096k Nonvolatile SRAM with Battery Monitor | |||
|
◁ |
AC ELECTRICAL
CHARACTERISTICS
PARAMETER
Read Cycle Time
Access Time
OE to Output Valid
CE to Output Valid
OE or CE to Output Active
Output High Z from Deselection
Output Hold from Address
Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Z from WE
Output Active from WE
Data Setup Time
Data Hold Time
DS1350Y/AB
(VCC=5V ±=5% for DS1350AB)
(tA: See Note 10) (VCC=5V ±=10% for DS1350Y)
DS1350AB-70 DS1350AB-100
DS1350Y-70 DS1330Y-100
SYMBOL MIN MAX MIN MAX UNITS NOTES
tRC
70
100
ns
tACC
70
100
ns
tOE
35
50
ns
tCO
70
100
ns
tCOE
5
5
ns
5
tOD
25
35
ns
5
tOH
5
5
ns
tWC
70
100
ns
tWP
55
75
ns
3
tAW
0
0
ns
tWR1
5
5
tWR2
12
12
ns
12
13
tODW
25
35
ns
5
tOEW
5
5
ns
5
tDS
30
40
ns
4
tDH1
0
0
tDH2
7
7
ns
12
13
READ CYCLE
SEE NOTE 1
5 of 12
|
▷ |