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DS1350Y Datasheet, PDF (5/12 Pages) Dallas Semiconductor – 4096k Nonvolatile SRAM with Battery Monitor
AC ELECTRICAL
CHARACTERISTICS
PARAMETER
Read Cycle Time
Access Time
OE to Output Valid
CE to Output Valid
OE or CE to Output Active
Output High Z from Deselection
Output Hold from Address
Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Z from WE
Output Active from WE
Data Setup Time
Data Hold Time
DS1350Y/AB
(VCC=5V ±=5% for DS1350AB)
(tA: See Note 10) (VCC=5V ±=10% for DS1350Y)
DS1350AB-70 DS1350AB-100
DS1350Y-70 DS1330Y-100
SYMBOL MIN MAX MIN MAX UNITS NOTES
tRC
70
100
ns
tACC
70
100
ns
tOE
35
50
ns
tCO
70
100
ns
tCOE
5
5
ns
5
tOD
25
35
ns
5
tOH
5
5
ns
tWC
70
100
ns
tWP
55
75
ns
3
tAW
0
0
ns
tWR1
5
5
tWR2
12
12
ns
12
13
tODW
25
35
ns
5
tOEW
5
5
ns
5
tDS
30
40
ns
4
tDH1
0
0
tDH2
7
7
ns
12
13
READ CYCLE
SEE NOTE 1
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