DS1330Y_10 Datasheet, PDF (5/10 Pages) Dallas Semiconductor – 256k Nonvolatile SRAM with Battery Monitor

CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C_IN
C_I/O
MIN
TYP
5
5
MAX
10
10
DS1330Y/AB
(T_A = +25°C)
UNITS NOTES
pF
pF
AC ELECTRICAL CHARACTERISTICS
(V_CC = 5V ± 5% for DS1330AB)
(T_A: See Note 10) (V_CC = 5V ± 10% for DS1330Y)
DS1330AB-70
PARAMETER
SYMBOL
DS1330Y-70
UNITS NOTES
MIN
MAX
Read Cycle Time
t_RC
70
ns
Access Time
t_ACC
70
ns
OE to Output Valid
t_OE
45
ns
CE to Output Valid
t_CO
70
ns
OE or CE to Output Active
t_COE
5
ns
5
Output High Z from Deselection
t_OD
25
ns
5
Output Hold from Address
Change
t_OH
5
ns
Write Cycle Time
t_WC
70
ns
Write Pulse Width
t_WP
55
ns
3
Address Setup Time
t_AW
0
ns
Write Recovery Time
t_WR1
5
t_WR2
12
ns
12
13
Output High Z from WE
t_ODW
25
ns
5
Output Active from WE
t_OEW
5
ns
5
Data Setup Time
t_DS
30
ns
4
Data Hold Time
t_DH1
0
t_DH2
7
ns
12
13
READ CYCLE
SEE NOTE 1
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