DS1330Y_10 Datasheet, PDF (4/10 Pages) Dallas Semiconductor – 256k Nonvolatile SRAM with Battery Monitor

ABSOLUTE MAXIMUM RATINGS
Voltage on Any Pin Relative to Ground
Operating Temperature Range
Commercial:
Industrial:
Storage Temperature Range
Lead Temperature (soldering, 10s)
Soldering Temperature (reflow)
DS1330Y/AB
-0.3V to +6.0V
0°C to +70°C
-40°C to +85°C
-55°C to +125°C
+260°C
+260°C
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL MIN TYP
DS1330AB Power Supply Voltage
V_CC
4.75 5.0
DS1330Y Power Supply Voltage
V_CC
4.5 5.0
Logic 1
V_IH
2.2
Logic 0
V_IL
0.0
(T_A: See Note 10)
MAX UNITS NOTES
5.25
V
5.5
V
V_CC
V
0.8
V
DC ELECTRICAL CHARACTERISTICS
(V_CC = 5V ± 5% for DS1330AB)
(T_A: See Note 10) (V_CC = 5V ± 10% for DS1330Y)
PARAMETER
SYMBOL MIN TYP MAX UNITS NOTES
Input Leakage Current
I_IL
-1.0
+1.0
µA
I/O Leakage Current CE ≥ V_IH ≤ V_CC
I_IO
-1.0
+1.0
µA
Output Current @ 2.4V
I_OH
-1.0
mA
14
Output Current @ 0.4V
I_OL
2.0
mA
14
Standby Current CE =2.2V
I_CCS1
200 600
µA
Standby Current CE =V_CC-0.5V
I_CCS2
50
150
µA
Operating Current
I_CCO1
85
mA
Write Protection Voltage (DS1330AB)
V_TP
4.50 4.62 4.75
V
Write Protection Voltage (DS1330Y)
V_TP
4.25 4.37 4.5
V
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