DS1245Y_10 Datasheet, PDF (5/10 Pages) Dallas Semiconductor – 1024k Nonvolatile SRAM

DS1245Y/AB
AC ELECTRICAL CHARACTERISTICS
(V_CC = 5V ±5% for DS1245AB)
(T_A: See Note 10) (V_CC = 5V ±10% for DS1245Y)
PARAMETER
SYMBOL
DS1245AB-70
DS1245Y-70
UNITS NOTES
MIN
MAX
Read Cycle Time
t_RC
70
ns
Access Time
t_ACC
70
ns
OE to Output Valid
t_OE
35
ns
CE to Output Valid
t_CO
70
ns
OE or CE to Output Active
t_COE
5
ns
5
Output High Z from Deselection
t_OD
25
ns
5
Output Hold from Address Change
t_OH
5
ns
Write Cycle Time
t_WC
70
ns
Write Pulse Width
t_WP
55
ns
3
Address Setup Time
Write Recovery Time
t_AW
0
t_WR1
5
t_WR2
15
ns
ns
12
ns
13
Output High Z from WE
t_ODW
25
ns
5
Output Active from WE
t_OEW
5
ns
5
Data Setup Time
Data Hold Time
t_DS
30
t_DH1
0
t_DH2
10
ns
4
ns
12
ns
13
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