DS1210_03 Datasheet, PDF (5/6 Pages) Dallas Semiconductor – Nonvolatile Controller Chip

CAPACITANCE
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL
C_IN
C_OUT
MIN
TYP
MAX
5
7
DS1210
(T_A = 25°C)
UNITS NOTES
pF
pF
AC ELECTRICAL CHARACTERISTICS
(See Note 9; V_CCI = 4.75V to 5.5V, PIN 3 = GND)
(V_CCI = 4.75V to 5.5V, PIN 3 = GND)
PARAMETER
SYMBOL MIN TYP MAX UNITS NOTES
CE Propagation Delay
t_PD
5
10
20
ns
5
CE High to Power-Fail
t_PF
0
ns
(See Note 9; V_CCI = 4.75V, PIN 3 = GND; V_CCI < 4.5, PIN 3 = V_CCO)
Recovery at Power Up
t_REC
2
80
125
ms
V_CC Slew Rate Power-Down
t_F
300
µs
V_CC Slew Rate Power-Down
t_FB
10
µs
V_CC Slew Rate Power-Down
t_R
0
µs
CE Pulse Width
t_CE
1.5
µs
8
NOTES:
1. All voltages are referenced to ground.
2. Only one battery input is required. Unused battery inputs must be grounded.
3. Measured with V_CCO and CEO open.
4. I_CC01 is the maximum average load which the DS1210 can supply to the memories.
5. Measured with a load as shown in Figure 2.
6. I_CC02 is the maximum average load current which the DS1210 can supply to the memories in the
battery backup mode.
7. t_CE max. must be met to ensure data integrity on power loss.
8. CEO can only sustain leakage current in the battery backup mode.
9. All AC and DC electrical characteristics are valid for the full temperature range. For commercial
products, this range is 0 to +70°C. For industrial products (N), this range is -40°C to +85°C.
10. DS1210 is recognized by Underwriters Laboratory (U.L.^®) under file E99151.
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