DS1345Y Datasheet, PDF (4/12 Pages) Dallas Semiconductor – 1024k Nonvolatile SRAM with Battery Monitor

ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
DS1345Y/AB
-0.3V to +7.0V
0°C to 70°C, -40°C to +85°C for IND parts
-40°C to +70°C, -40°C to +85°C for IND parts
260°C for 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL MIN TYP
DS1345AB Power Supply Voltage
V_CC
4.75 5.0
DS1345Y Power Supply Voltage
V_CC
4.5 5.0
Logic 1
V_IH
2.2
Logic 0
V_IL
0.0
(t_A: See Note 10)
MAX UNITS NOTES
5.25
V
5.5
V
V_CC
V
0.8
V
DC ELECTRICAL
CHARACTERISTICS
PARAMETER
Input Leakage Current
I/O Leakage Current CE ≥ V_IH ≤ V_CC
Output Current @ 2.4V
Output Current @ 0.4V
Standby Current CE =2.2V
Standby Current CE =V_CC-0.5V
Operating Current
Write Protection Voltage (DS1345AB)
Write Protection Voltage (DS1345Y)
(V_CC=5V ±=5% for DS1345AB)
(t_A: See Note 10) (V_CC=5V ±=10% for DS1345Y)
SYMBOL MIN TYP MAX UNITS NOTES
I_IL
-1.0
+1.0
µA
I_IO
-1.0
+1.0
µA
I_OH
-1.0
mA
14
I_OL
2.0
mA
14
I_CCS1
200 600
µA
I_CCS2
50
150
µA
I_CCO1
85
mA
V_TP
4.50 4.62 4.75
V
V_TP
4.25 4.37 4.5
V
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C_IN
C_I/O
MIN
TYP
5
5
MAX
10
10
(t_A=25°C)
UNITS NOTES
pF
pF
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