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DS1270W_10 Datasheet, PDF (4/8 Pages) Dallas Semiconductor – 3.3V 16Mb Nonvolatile SRAM | |||
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AC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Read Cycle Time
tRC
Access Time
tACC
OE to Output Valid
tOE
CE to Output Valid
tCO
OE or CE to Output Active
tCOE
Output High-Z from Deselection
tOD
Output Hold from Address Change
tOH
Write Cycle Time
tWC
Write Pulse Width
tWP
Address Setup Time
tAW
Write Recovery Time
tWR1
tWR2
Output High-Z from WE
Output Active from WE
Data Setup Time
Data Hold Time
tODW
tOEW
tDS
tDH1
tDH2
DS1270W
(TA: See Note 10; VCC = 3.3V ± 0.3V)
DS1270W-100
MIN
MAX
UNITS
NOTES
100
ns
100
ns
50
ns
100
ns
5
ns
5
35
ns
5
5
ns
100
ns
75
ns
3
0
ns
5
ns
12
20
ns
13
35
ns
5
5
ns
5
40
ns
4
0
ns
12
20
ns
13
TIMING DIAGRAM: READ CYCLE
SEE NOTE 1
4 of 8
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