DS1270W_10 Datasheet, PDF (3/8 Pages) Dallas Semiconductor – 3.3V 16Mb Nonvolatile SRAM

ABSOLUTE MAXIMUM RATINGS
Voltage on Any Pin Relative to Ground
Operating Temperature Range
Commercial:
Industrial:
Storage Temperature Range
Lead Temperature (soldering, 10s)
Note: EDIP is wave or hand soldered only.
DS1270W
-0.3V to +4.6V
0°C to +70°C
-40°C to +85°C
-40°C to +85°C
+260°C
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect
reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL MIN TYP
Power-Supply Voltage
V_CC
3.0 3.3
Logic 1 Input Voltage
V_IH
2.2
Logic 0 Input Voltage
V_IL
0.0
(T_A: See Note 10)
MAX UNITS NOTES
3.6
V
V_CC
V
+0.4
V
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Input Leakage Current
I_IL
I/O Leakage Current
I_IO
Output Current at 2.2V
I_OH
Output Current at 0.4V
I_OL
Standby Current CE = 2.2V
I_CCS1
Standby Current CE = V_CC - 0.2V
I_CCS2
Operating Current
I_CCO1
Write Protection Voltage
V_TP
(T_A: See Note 10; V_CC = 3.3V ± 0.3V)
MIN TYP MAX UNITS NOTES
-4.0
+4.0
µA
-4.0
+4.0
µA
-1.0
mA
2.0
mA
150 300
µA
100 200
µA
50
mA
2.8 2.9
3.0
V
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C_IN
C_I/O
MIN
TYP
20
20
MAX
40
40
(T_A = +25°C)
UNITS NOTES
pF
pF
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