DS1250Y Datasheet, PDF (4/11 Pages) Dallas Semiconductor – 4096k Nonvolatile SRAM

CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C_IN
C_I/O
MIN
TYP
5
5
MAX
10
10
DS1250Y/AB
(t_A=25°C)
UNITS NOTES
pF
pF
AC ELECTRICAL
CHARACTERISTICS
PARAMETER
Read Cycle Time
Access Time
OE to Output Valid
CE to Output Valid
OE or CE to Output Active
Output High Z from Deselection
Output Hold from Address Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Z from WE
Output Active from WE
Data Setup Time
Data Hold Time
(V_CC=5V ±=5% for DS1250AB)
(t_A: See Note 10) (V_CC=5V ±=10% for DS1250Y)
DS1250AB-70 DS1250AB-100
DS1250Y-70 DS1250Y-100
SYMBOL MIN MAX MIN MAX UNITS NOTES
t_RC
70
100
ns
t_ACC
70
100
ns
t_OE
35
50
ns
t_CO
70
100
ns
t_COE
5
5
ns
5
t_OD
25
35
ns
5
t_OH
5
5
ns
t_WC
70
100
ns
t_WP
55
75
ns
3
t_AW
0
0
ns
t_WR1
5
5
t_WR2
15
15
ns
12
ns
13
t_ODW
25
35
ns
5
t_OEW
5
5
ns
5
t_DS
30
40
ns
4
t_DH1
0
0
t_DH2
10
10
ns
12
ns
13
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