DS1250Y Datasheet, PDF (3/11 Pages) Dallas Semiconductor – 4096k Nonvolatile SRAM

DS1250Y/AB
PACKAGES
The DS1250 is available in two packages: 32-pin DIP and 34-pin PowerCap Module (PCM). The 32-pin
DIP integrates a lithium battery, an SRAM memory and a nonvolatile control function into a single
package with a JEDEC-standard 600-mil DIP pinout. The 34-pin PowerCap Module integrates SRAM
memory and nonvolatile control into a module base along with contacts for connection to the lithium
battery in the DS9034PC PowerCap. The PowerCap Module package design allows a DS1250 PCM
device to be surface mounted without subjecting its lithium backup battery to destructive high-
temperature reflow soldering. After a DS1250 PCM module base is reflow soldered, a DS9034PC
PowerCap is snapped on top of the PCM to form a complete Nonvolatile SRAM module. The DS9034PC
is keyed to prevent improper attachment. DS1250 module bases and DS9034PC PowerCaps are ordered
separately and shipped in separate containers. See the DS9034PC data sheet for further information.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
-0.3V to +7.0V
0°C to 70°C, -40°C to +85°C for IND parts
-40°C to +70°C, -40°C to +85°C for IND parts
260°C for 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL MIN TYP
DS1250AB Power Supply Voltage
V_CC
4.75 5.0
DS1250Y Power Supply Voltage
V_CC
4.5 5.0
Logic 1
V_IH
2.2
Logic 0
V_IL
0.0
(t_A: See Note 10)
MAX UNITS NOTES
5.25
V
5.5
V
V_CC
V
+0.8
V
DC ELECTRICAL
CHARACTERISTICS
PARAMETER
Input Leakage Current
I/O Leakage Current CE ≥ V_IH ≤ V_CC
Output Current @ 2.2V
Output Current @ 0.4V
Standby Current CE =2.2V
Standby Current CE =V_CC-0.5V
Operating Current
Write Protection Voltage (DS1250AB)
Write Protection Voltage (DS1250Y)
(V_CC=5V ±=5% for DS1250AB)
(t_A: See Note 10) (V_CC=5V ±=10% for DS1250Y)
SYMBOL MIN TYP MAX UNITS NOTES
I_IL
-1.0
+1.0
µA
I_IO
-1.0
+1.0
µA
I_OH
-1.0
mA
I_OL
2.0
mA
I_CCS1
5.0 10.0
mA
I_CCS2
3.0
5.0
mA
I_CCO1
85
mA
V_TP
4.50 4.62 4.75
V
V_TP
4.25 4.37 4.5
V
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