DS1230W Datasheet, PDF (4/11 Pages) Dallas Semiconductor – 3.3V 256k Nonvolatile SRAM

CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C_IN
C_I/O
MIN
TYP
5
5
MAX
10
10
DS1230W
(t_A=25°C)
UNITS NOTES
pF
pF
AC ELECTRICAL CHARACTERISTICS
(t_A: See Note 10) (V_CC=3.3V ±=3.0V)
DS1230W-150
PARAMETER
SYMBOL MIN MAX TYPE UNITS NOTES
Read Cycle Time
Access Time
OE to Output Valid
CE to Output Valid
OE or CE to Output Active
Output High Z from Deselection
t_RC
150
t_ACC
150
t_OE
70
t_CO
150
t_COE
5
t_OD
35
ns
ns
ns
ns
ns
5
ns
5
Output Hold from Address Change
t_OH
5
ns
Write Cycle Time
t_WC
150
ns
Write Pulse Width
Address Setup Time
Write Recovery Time
t_WP
100
t_AW
0
t_WR1
5
t_WR2
20
ns
3
ns
ns
12
ns
13
Output High Z from WE
t_ODW
35
ns
5
Output Active from WE
t_OEW
5
ns
5
Data Setup Time
Data Hold Time
t_DS
60
t_DH1
0
t_DH2
20
ns
4
ns
12
ns
13
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