DS1220Y Datasheet, PDF (4/8 Pages) Dallas Semiconductor – 16k Nonvolatile SRAM

AC ELECTRICAL CHARACTERISTICS
PARAMETER
Read Cycle Time
Access Time
SYM
t_RC
t_ACC
DS1220Y-100
MIN MAX
100
100
DS1220Y-120
MIN MAX
120
120
OE to Output
Valid
t_OE
50
60
CE to Output
Valid
t_CO
100
120
OE or CE to
Output Active
t_COE 5
5
Output High Z
from Deslection
t_OD
35
35
Output Hold from
Address Change
t_OH
5
5
Write Cycle Time _{tWC 100}
120
Write Pulse Width _{tWP 75}
90
Address Setup
Time
t_AW
0
0
Write Recovery
t_WR1 0
0
Time
t_WR2 ¹⁰
10
Output High Z
from WE
t_ODW
35
35
Output Active
from WE
t_OEW 5
5
Data Setup Time _{tDS 40}
50
Data Hold Time _{tDH1 0}
0
t_DH2 ¹⁰
10
DS1220Y
(T_A : See Note 10; V_CC =5.0V ± 10%)
DS1220Y-150
MIN MAX
DS1220Y-200
MIN MAX
UNITS NOTE
150
200
ns
150
200
ns
70
100
ns
150
200
ns
5
5
ns
5
35
35
5
5
150
200
100
150
0
0
0
0
10
10
35
35
ns
5
ns
ns
ns
3
ns
ns
12
ns
13
ns
5
5
5
60
80
0
0
10
10
ns
5
ns
4
ns
12
ns
13
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