DS9502 Datasheet, PDF (3/3 Pages) Dallas Semiconductor – ESD Protection Diode

PHYSICAL SPECIFICATIONS
Size
Weight
See mechanical drawing
0.5 grams
DS9502
ABSOLUTE MAXIMUM RATINGS*
Operating Temperature
Storage Temperature
Soldering Temperature
Continuous DC Current Through Package
–40°C to +85°C
–55°C to +125°C
260°C for 10 seconds
80 mA
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Leakage Current
I_L
Avalanche Voltage
V_AV
Trigger Voltage
V_TRIGGER
Trigger Current
I_TRIGGER
Holding Voltage
V_HOLD
Holding Current
I_HOLD
Forward Voltage (-10 mA)
V_F
Forward Current (-0.7V)
I_F
Maximum Peak Current
I_PP
Continuous Current Through Diode
I_CC
MIN
7.4
5.5
30
TYP
30
9.0
600
-0.7
-10
2.0
(-40°C to +85°C)
MAX UNITS NOTES
100
nA
2
7.8
V
1,3
9.5
V
1
1000 mA
V
1
mA
-0.8
V
4
-100
mA
4
A
5
±160
mA
6
CAPACITANCE
PARAMETER
Junction Capacitance (5V)
Junction Capacitance (0V)
SYMBOL
C_J5
C_J0
MIN
TYP
55
100
MAX
(t_A=25°C)
UNITS NOTES
pF
1
pF
1
THERMAL RESISTANCE
PARAMETER
Junction To Package
Junction To Ambient
SYMBOL
R_{Θ JC}
R_{Θ JA}
MIN
TYP
MAX
75
200
UNITS
K/W
K/W
NOTES
NOTES:
1. All voltages are referenced from Cathode to Anode.
2. At 7.0V.
3. At 0.3 µA.
4. Typical values at room temperature.
5. See pulse specification.
6. In either direction (forward or reverse) through the diode (pins 1 & 6 and 2 & 5 tied together,
otherwise +80 mA max).
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