DS9502 Datasheet, PDF (1/3 Pages) Dallas Semiconductor – ESD Protection Diode

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SPECIAL FEATURES
§ Zener characteristic with voltage snap–back
to protect against ESD hits
§ High avalanche voltage, low leakage and low
capacitance avoid signal attenuation
§ Compatible to all 5V logic families
§ Space saving, low inductance TSOC surface
mount package
§ Symmetric dual–port bondout to maximize
energy dissipation in protection device
§ Industrial temperature range
DS9502
ESD Protection Diode
SYMBOL AND CONVENTIONS
C
IC
VCA
A
PACKAGE OUTLINE
TSOC SURFACE MOUNT PACKAGE
1
6
2
5
SIDE VIEW
3
4
TOP VIEW
3.7 X 4.0 X 1.5 mm
See Mech. Drawings
Section
ORDERING INFORMATION
DS9502P 6-lead TSOC package
DESCRIPTION
This DS9502 was designed as an additional ESD protection for SRAM–based battery–buffered portable
memory modules. The memory chips used for these modules have already a strong ESD–protection
structure on their I/O line. Together with the DS9502 the ESD protection level is raised to more than
27 kV (IEC 801–2 Reference model). In case of abnormal ESD hits beyond its maximum ratings the
DS9502 will eventually fail “short” thus preventing further damage.
During normal operation the DS9502 behaves like a regular 7.5V Zener Diode. When the voltage exceeds
the trigger voltage, the I/V characteristic of the device will “snapback” allowing the same or higher
amount of current to flow, but at a significantly lower voltage. As long as a minimum current or voltage
is maintained, the device will stay in the “snapback mode”. If the voltage or the current falls below the
holding voltage or holding current, the device will abruptly change to its normal mode and conduct only a
small leakage current.
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