DS2016 Datasheet, PDF (3/9 Pages) Dallas Semiconductor – 2k x 8 3V/5V Operation Static RAM

DS2016
AC CHARACTERISTICS READ CYCLE (T_A= -40°C to +85°C; V_CC = 5V ± 10%)
PARAMETER
DS2016-100
DS2016-150
SYMBOL
UNITS NOTES
MIN TYP MAX MIN TYP MAX
Read Cycle Time
t_RC
100
150
ns
Access Time
t_ACC
100
150 ns
OE to Output Valid
t_OE
50
70
ns
CE to Output Valid
t_CO
100
150 ns
CE or OE to Output
t_COE
5
5
ns
Active
Output High-Z from
t_OD
5
Deselection
35 10
60
ns
Output Hold from
t_OH
5
10
ns
Address Change
AC CHARACTERISTICS WRITE CYCLE (T_A= -40°C to +85°C; V_CC = 5V ± 10%)
PARAMETER
DS2016-100
DS2016-150
SYMBOL
UNITS NOTES
MIN TYP MAX MIN TYP MAX
Write Cycle Time
t_WC
100
150
ns
Write Pulse Width
t_WP
75
120
ns
Address Setup Time
t_AW
0
0
ns
Write Recovery
Time
t_WR
10
10
ns
Output High-Z from
WE
t_ODW
35
70
ns
Output Active from
WE
t_OEW
5
5
ns
Data Setup Time
t_DS
40
60
ns
Data Hold Time
t_DH
0
0
ns
DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
Data Retention Supply
Voltage
V_DR
CE ≥ V_CC - 0.5V
Data Retention
Current at 5.5V
I_CCR1
CE ≥ V_CC - 0.5V
Data Retention
Current at 2.0V
I_CCR2
CE ≥ V_CC - 0.5V
Chip Deselect to Data
Retention
t_CDR
Recovery Time
t_R
* Typical values are at 25°C
(T_A = -40°C to +85°C)
MIN TYP MAX UNITS
2.0
5.5
V
0.1* 1
µA
50* 750
nA
0
µs
2
ms
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