DS2016 Datasheet, PDF (1/9 Pages) Dallas Semiconductor – 2k x 8 3V/5V Operation Static RAM

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DS2016
2k x 8 3V/5V Operation Static RAM
FEATURES
§ Low-power CMOS design
§ Standby current
− 50 nA max at t_A = 25°C V_CC = 3.0V
− 100 nA max at t_A = 25°C V_CC = 5.5V
− 1 µA max at t_A = 60°C V_CC = 5.5V
§ Full operation for V_CC = 5.5V to 2.7V
§ Data retention voltage = 5.5V to 2.0V
§ Fast 5V access time
− DS2016 - 100 100 ns
− DS2016 - 150 150 ns
§ Reduced-speed 3V access time
− DS2016 - 100 250 ns
− DS2016 - 150 250 ns
§ Operating temperature range of -40°C to
+85°C
§ Full static operation
§ TTL compatible inputs and outputs over
voltage range of 5.5V to 2.7 volts.
§ Available in 24-pin DIP and 24-pin SOIC
packages
§ Suitable for both battery operated and battery
backup applications
PIN ASSIGNMENT
A7 1
A6 2
A5 3
A4 4
A3 5
A2 6
A1 7
A0 8
DQ0 9
DQ1 10
DQ2 11
GND 12
24
V_CC
23 A8
22 A9
21 WE
20 OE
19 A10
18 CE
17 DQ7
16 DQ6
15 DQ5
14 DQ4
13 DQ3
DS2016 24-Pin DIP (600-mil)
DS2016R 24-Pin SOIC (300-mil)
PIN DESCRIPTION
A0 - A10 - Address Inputs
DQ0 - DQ7 - Data Input/Output
CE
- Chip Enable Input
WE
- Write Enable Input
OE
- Output Enable Input
V_CC
GND
- Power Supply Input 2.7V - 5.5V
- Ground
DESCRIPTION
The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access
memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single
power supply with a voltage input between 2.7 and 5.5 volts. The chip enable input ( CE ) is used for
device selection and can be used in order to achieve the minimum standby current mode, which facilitates
both battery operated and battery backup applications. The device provides access times as fast as 100 ns
when operated from a 5-volt power supply input and also provides relatively good performance of 250 ns
access while operating from a 3-volt input. The device maintains TTL-level inputs and outputs over the
input voltage range of 2.7 to 5.5 volts. The DS2016 is most suitable for low-power applications where
battery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8
SRAM and is pin-compatible with ROM and EPROM of similar density.
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