DS1350W Datasheet, PDF (3/11 Pages) Dallas Semiconductor – 3.3V 4096K Nonvolatile SRAM with Battery Monitor

DS1350W
ABSOLUTE MAXIMUM RATINGS*
Voltage On Any Pin Relative To Ground
Operating Temperature
Storage Temperature
Soldering Temperature
–0.3V to +4.6V
0°C to 70°C, –40°C to +85°C for IND parts
–40°C to +70°C, –40°C to +85°C for IND parts
260°C For 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL MIN
Power Supply Voltage
V_CC
3.0
Logic 1
V_IH
2.2
Logic 0
V_IL
0.0
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN
Input Leakage Current
I/O Leakage Current
CE ≥ V_IH ≤ V_CC
I_IL
–1.0
I_IO
–1.0
Output Current @ 2.2V
Output Current @ 0.4V
Standby Current CE = 2.2V
Standby Current CE = V_CC–0.2V
Operating Current
Write Protection Voltage
I_OH
I_OL
I_CCS1
I_CCS2
I_CCO1
V_TP
–1.0
2.0
2.8
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL MIN
C_IN
C_I/O
(t_A: See Note 10)
TYP
MAX
UNITS NOTES
3.3
3.6
V
V_CC
V
0.4
V
(t_A: See Note 10) (V_CC=3.3V ±0.3V)
TYP
MAX
UNITS NOTES
+1.0
µA
+1.0
µA
mA
14
mA
14
50
250
µA
30
150
µA
50
mA
2.9
3.0
V
(t_A = 25°C)
TYP
MAX
UNITS NOTES
5
10
pF
5
10
pF
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