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DS1245W Datasheet, PDF (3/11 Pages) Dallas Semiconductor – 3.3V 1024k Nonvolatile SRAM
DS1245W
memory and nonvolatile control into a module base along with contacts for connection to the lithium
battery in the DS9034PC PowerCap. The PowerCap Module package design allows a DS1245W PCM
device to be surface mounted without subjecting its lithium backup battery to destructive high-
temperature reflow soldering. After a DS1245W module base is reflow soldered, a DS9034PC PowerCap
is snapped on top of the base to form a complete Nonvolatile SRAM module. The DS9034PC is keyed to
prevent improper attachment. DS1245W module bases and DS9034PC PowerCaps are ordered separately
and shipped in separate containers. See the DS9034PC data sheet for further information.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
-0.3V to +4.6V
0°C to 70°C, -40°C to +85°C for Ind parts
-40°C to +70°C, -40°C to +85°C for Ind parts
260°C for 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL MIN TYP
Power Supply Voltage
VCC
3.0 3.3
Logic 1
VIH
2.2
Logic 0
VIL
0.0
(tA: See Note 10)
MAX UNITS NOTES
3.6
V
VCC
V
0.4
V
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Input Leakage Current
IIL
I/O Leakage Current CE ≥ VIH ≤ VCC
IIO
Output Current @ 2.2V
IOH
Output Current @ 0.4V
IOL
Standby Current CE =2.2V
ICCS1
Standby Current CE =VCC-0.2V
ICCS2
Operating Current
ICCO1
Write Protection Voltage (DS1245AB)
VTP
(tA: See Note 10) (VCC=3.3V ±=0.3V)
MIN TYP MAX UNITS NOTES
-1.0
+1.0
µA
-1.0
+1.0
µA
-1.0
mA
2.0
mA
50
250
µA
30
150
µA
50
mA
2.8 2.9
3.0
V
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
CIN
CI/O
MIN
TYP
5
5
MAX
10
10
(tA=25°C)
UNITS NOTES
pF
pF
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