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DS1385 Datasheet, PDF (16/20 Pages) Dallas Semiconductor – RAMified Real Time Clock 4K x 8
DS1385/DS1387
POWER–DOWN CONDITION
CE
VCC
POWER FAIL
VIH
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
tPF
tF
4.5V
4.25V
4.0V
VBAT
tDR
tFB
POWER–UP POWER–DOWN TIMING
PARAMETER
SYMBOL
MIN
CE High to Power Fail
Recovery at Power Up
VCC Slew Rate Power Down
VCC Slew Rate Power Down
VCC Slew Rate Power Up
Expected Data Retention
tPF
tREC
tF
300
4.0 <VCC < 4.5V
tFB
10
3.0 <VCC< 4.0V
tR
0
4.5V>VCC>4.0V
tDR
10
(tA = 25°C)
TYP
MAX UNITS NOTES
0
ns
150
ms
µs
µs
µs
years
8
WARNING:
Under no circumstances are negative undershoots, of any amplitude, allowed when device is in battery back–up
mode.
CAPACITANCE
PARAMETER
Input Capacitance
Output Capacitance
(tA = 25°C)
SYMBOL MIN
TYP
MAX
UNITS NOTES
CIN
COUT
12
pF
12
pF
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