MTB20C03J4 Datasheet, PDF (8/13 Pages) Cystech Electonics Corp. – N & P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C914J4
Issued Date : 2013.05.13
Revised Date : 2013.12.31
Page No. : 8/13
Q2, P-CH Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10000
1.4
1000
1.2
Ciss
1
Threshold Voltage vs Junction Tempearture
ID=-250μA
C _oss
0.8
100
Crss
0.6
10
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
10
0.4
-60 -20
20
60
100
140
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=-15V
8
VDS=-10V
6
VDS=-5V
1
0.1
0.01
100
VDS=-5V
Pulsed
TA=25°C
0.1
1
10
100
-ID, Drain Current(A)
Maximum Safe Operating Area
10
1
0.1
TA=25°C, Tj=175C, VGS=-10V
θ_JA=90°C/W, Single Pulse
0.01
0.01
0.1
1
10
-ID, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
4
2
ID=-7A
0
0 2 4 6 8 10 12 14 16
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
8
7
6
5
4
3
2
TA=25°C, VGS=-10V
1
RθJA=90°C/W
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
MTB20C03J4
CYStek Product Specification