MTB20C03J4 Datasheet, PDF (1/13 Pages) Cystech Electonics Corp. – N & P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C914J4
Issued Date : 2013.05.13
Revised Date : 2013.12.31
Page No. : 1/13
N & P-Channel Enhancement Mode Power MOSFET
MTB20C03J4
BVDSS
ID
Features
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant & Halogen-free package
RDSON(MAX)
N-CH
30V
8A
18mΩ
P-CH
-30V
-7A
28mΩ
Equivalent Circuit
MTB20C03J4
Outline
TO-252-4L
G：Gate D：Drain
S：Source
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Parameter
Symbol
Limits
N-channel P-channel
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
VGS
±20
-30
±20
V
Continuous Drain Current @ TC=25°C
31
-27
Continuous Drain Current @ TC=100°C
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
ID
22
-19
8
-7
A
6.7
-5.9
Pulsed Drain Current *1
IDM
66
-45
Avalanche Current
IAS
15
-15
Avalanche Energy @ L=0.1mH, ID=15A(-15A for P-ch),RG=25Ω EAS 11.3
Repetitive Avalanche Energy @ L=0.05mH *2
EAR
2.5
11.3 _mJ
2.5
Total Power Dissipation (TC=25℃)
Total Power Dissipation (TC=100℃)
Pd
25
18
W
Operating Junction and Storage Temperature Range
Tj, Tstg -55~+175
°C
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
MTB20C03J4
CYStek Product Specification