MTC6601N6 Datasheet, PDF (7/12 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C813N6
Issued Date : 2017.03.30
Revised Date :
Page No. : 7/12
P-channel Typical Characteristics
16
10V
14
9V
12
8V
7V
10
6V
5V
8 4V
6
4
2
0
0
Typical Output Characteristics
-VGS=3V
-VGS=2.5V
-VGS=2V
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=-2.5V VGS=-4.5V
Brekdown Voltage vs Ambient Temperature
1.6
1.4
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
100
Tj=150°C
0.6
VGS=-10V
10
0.01
0.1
1
10
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
300
ID=-2.3A
250
200
150
100
50
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
0.4
0.2
0
2
4
6
8
10
-IDR, Reverse Drain Current (A)
Drain-Source On-State Resistance vs Junction Tempearture
2
1.8
VGS=-10V, ID=-2.3A
1.6
1.4
1.2
1
0.8
0.6
RDS(ON)@Tj=25°C : 91.4mΩ
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTC6601N6
CYStek Product Specification