MTC6601N6 Datasheet, PDF (1/12 Pages) Cystech Electonics Corp. – N- AND P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
N- AND P-Channel Enhancement Mode MOSFET
MTC6601N6 _BVDSS
ID
RDSON
(TYP.)
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
N-CH
30V
3.7A(VGS=10V)
37.7mΩ(VGS=10V)
42.7mΩ(VGS=4.5V)
62.6mΩ(VGS=2.5V)
Spec. No. : C813N6
Issued Date : 2017.03.30
Revised Date :
Page No. : 1/12
P-CH
-30V
-2.7A(VGS=-10 V)
91.3mΩ(VGS=-10V)
104mΩ(VGS=-4.5V)
132mΩ(VGS=-2.5V)
Equivalent Circuit
MTC6601N6
Outline
SOT-26
D2
S1
D1
G：Gate S：Source D：Drain
G2
S2
G1
Ordering Information
Device
MTC6601N6-0-T1-G
Package
SOT-26
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTC6601N6
CYStek Product Specification