MTC2103BJ4 Datasheet, PDF (6/11 Pages) Cystech Electonics Corp. – N & P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Characteristic Curves(Cont.)
P-Channel
Spec. No. : C448J4
Issued Date : 2009.03.10
Revised Date :
Page No. : 6/11
Typical Output Characteristics
25
VGS =-10V
-6.0V
-5.0V _-4.5V
20
-4.0V
15
-3.5V
10
-3.0V
5
0
0
1
2
3
4
5
-VDSDrain-SourceVoltage( V)
On-ResistanceVariationwithDrainCurrent andGateVoltage
2.4
2.2
VGS=-4V
2.0
1.8
1.6
1.4
1.2
1.0
-4.5V
-6.0V
-7.0V
-8.0V
-10V
0.8
0
5
10
15
-ID Drain Current( A)
20
25
On-Resistance Variation with Temperature
1.6
ID =-6A
VGS=-10V
1.4
1.2
1.0
0.8
0.6
-50 -25
0
25 50
75 100 125 150
Tj -JunctionTemperatur°e( C)
On-ResistanceVariation with Gate-SourceVoltage
0.12
I D = -3A
0.09
TA =125°C
0.06
TA =25°C
0.03
02
4
6
8
10
-VGS Gate-SourceVoltage(V)
15
VDS=-5.0V
12
Transfer Characteristics
TA =-55°C
9
25°C
125°C
6
3
0
1
2
3
4
5
-VGS ,Gate-Source Voltage
BodyDiodeForwardVoltageVariation with
SourceCurrent and Temperature
100
VSD=0V
10
1
TA =125°C
25°C
0.1
-55°C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1.0
-VSD- BodyDiodeForwardVoltage( V)
1.2 1.4
MTC2103BJ4
CYStek Product Specification