MTC2103BJ4 Datasheet, PDF (1/11 Pages) Cystech Electonics Corp. – N & P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C448J4
Issued Date : 2009.03.10
Revised Date :
Page No. : 1/11
N & P-Channel Enhancement Mode Power MOSFET
MTC2103BJ4
N-CH P-CH
BVDSS
30V
-30V
Features
ID
8A
-6A
• Low Gate Charge
RDSON(MAX)
21mΩ 45mΩ
• Simple Drive Requirement
• 100% UIS test @ VD=15V, L=0.1mH, VG=10V, IL=7.5A, Rated VDS=30V, for N-CH
• 100% UIS test @ VD=15V, L=0.1mH, VG=-10V, IL=-6A, Rated VDS=-30V, for P-CH
• RoHS compliant & Halogen-free package
Equivalent Circuit
MTC2103BJ4
Outline
TO-252-4L
G：Gate D：Drain
S：Source
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
N-channel P-channel
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
VGS ±20
-30
±20
V
Continuous Drain Current @ TC=25°C
ID
8
-6
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
ID
6
IDM
32
-5
A
-24
Avalanche Current
IAS
15
-15
Avalanche Energy @ L=0.1mH, ID=10A(-10A for P-ch),RG=25Ω EAS
5
Repetitive Avalanche Energy @ L=0.05mH *2
EAR
2.5
5
mJ
2.5
Total Power Dissipation (TC=25℃)
Total Power Dissipation (TC=100℃)
Pd
25
18
W
Operating Junction and Storage Temperature Range
Tj, Tstg -55~+175
°C
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
MTC2103BJ4
CYStek Product Specification