MTN2342N3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – 16V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C710N3
Issued Date : 2013.12.18
Revised Date :
Page No. : 5/ 9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
Crss
C _oss
100
10
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Threshold Voltage vs Junction Tempearture
1.6
1.4
1.2
1
ID=1mA
0.8
0.6
0.4
ID=250μA
0.2
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
10
Gate Charge Characteristics
4.5
4
VDS=8V
ID=6A
3.5
3
2.5
1
2
VDS=4V
1.5
0.1
Pulsed
1
Ta=25°C
0.5
0.01
0.001
0.01
0.1
1
10
ID, Drain Current(A)
0
0
2
4
6
8
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDS(ON)
10 Limit
1
100μs
1ms
10ms
0.1
TA=25°C, Tj=150°, VGS=4.5V
RθJA=100°C/W, Single Pulse
0.01
0.01
0.1
1
10
VDS, Drain-Source Voltage(V)
100ms
DC
100
Maximum Drain Current vs Junction Temperature
7
6
5
4
3
2
1
TA=25°C, VGS=4.5V, RθJA=100°C/W
0
25
50
75
100 125 150 175
Tj, Junction Temperature(°C)
MTN2342N3
CYStek Product Specification