MTN2342N3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – 16V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C710N3
Issued Date : 2013.12.18
Revised Date :
Page No. : 4/ 9
Typical Characteristics
30
25
20
15
10
5
0
0
Typical Output Characteristics
5V,4.5V,4V,3.5V,3V,2.5V,2V
VGS=1.5V
VGS=1V
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=1.2V
1.5V
1.8V
100
2.5V
4.5V
Reverse Drain Current vs Source-Drain Voltage
1.2
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
10
0.001 0.01
0.1
1
10
100
ID, Drain Current(A)
0.2
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
160
ID=7.2A
140
120
100
80
60
40
20
0
0
1
2
3
4
5
VGS, Gate-Source Voltage(V)
Drain-Source On-State Resistance vs Junction Tempearture
1.6
1.4
VGS=4.5V, ID=7.2A
1.2
1
0.8
0.6
RDSON@Tj=25°C : 15.1mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTN2342N3
CYStek Product Specification